Samsung has launched its 3nm gate-all-around transistor (GAAFET) process with the aim of stealing the march on TSMC. Samsung’s 3nm process is the industry’s first commercial production process node ...
TSMC revealed its plans for its N2 2nm silicon production earlier this month, and has now revealed more details about it. In addition to switching from FinFET to a gate-all-around (GAA) design using ...
TSMC's 2nm process node is cruising through development and is already showing better defect rates than 3nm and 7nm did at the same stage. According to Taiwanese outlet Ctee, the node now matches the ...
The US government has added a number of advanced technologies to its export sanctions list, bringing sanctions in line with those of its international partners. The Commerce Department’s Bureau of ...
Why it matters: The transition from planar transistors to FinFET was enough to keep Moore's Law relevant for the last 10 years, but even that design is running out of steam. Gate-all-around ...
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