Gallium-nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications.
It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier ...
GPU-accelerated electromagnetic simulation is redefining how engineers design and validate antennas in complex, electrically ...
SB-3000 R|Evolution (sealed) – A compact sealed-cabinet subwoofer designed for accuracy and musical control, with claimed low-frequency extension down to 17 Hz (±3 dB). This model is clearly aimed at ...
Download this article in PDF format. In February 2019, my friend and mentor Jerry Dale Merryman passed away. He was most well-known for inventing the first digital handheld calculator known as ...
Abstract: This work presents the design and development of GaN-based high-efficiency Class-F and Inverse-Class-F (Class-F−1) High Power Amplifiers (HPAs) at S, C, and Ku-bands using commercial ICs and ...
Abstract: A genetic Bayesian (GBay) multiobjective optimization methodology is proposed for robust power amplifier (PA) design, addressing critical challenges in wireless communication systems. The ...
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