For switching high-powered loads from a microcontroller, or for switching AC loads in general, most of us will reach into the ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Abstract: The high-voltage sub-nanosecond pulses with high repetition rate are widely used. The Marx-bank circuit (MBC) based on the avalanche bipolar junction transistor (ABJT) is an important and ...
Standalone NPN Market generated USD 7.6 bn in 2024 and is predicted to register growth from USD 9.1 bn in 2025 to about USD ...
A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for ...
Effective thermal management is crucial to prevent overheating and optimize performance in modern SoCs. Inadequate temperature control due to inaccurate thermal sensing compromises power management, ...
The transistor, invented at Bell Labs in 1947, replaced bulky vacuum tubes and enabled the miniaturization revolution that created modern electronics. The transistor stands as one of the most ...
Transistors are considered a technology far ahead of their time. Invented in 1947, the technological breakthrough fetched the Nobel Prize in Physics for Walter Brattain, John Bardeen, and William ...
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