The latest graphics processing units (GPUs), such as the Blackwell B100 and B200 at the heart of NVIDIA’s latest AI ...

Mtron, a leading supplier of highly engineered electronic components and solutions used to control the frequency and timing of signals in electronic circuits, today announced a multi-year agreement ...

Rocket Lab USA, Inc. (“Rocket Lab” or “the Company”), a global leader in launch services and space systems, today introduced its expanded suite of space-grade radio frequency (RF) communications ...

Among these new products include integrated GaN power stages, GaN power transistors ... Initial test results demonstrate a 2× to 4× increase in SCWT compared with existing SiC devices, according to ...

Designed for large-scale storage projects, the inverter features a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC) MOSFET technology, which the company said supports high ...

Claiming a new benchmark for 100-V gallium-nitride (GaN) power transistors, Efficient Power Conversion (EPC ... compared to previous-generation GaN and traditional silicon MOSFET solutions, EPC said.

onsemi has launched the first generation of its 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistor (MOSFET)-based SPM 31 intelligent power modules (IPMs). The onsemi ...

Current handling is 101A continuous (25°C), or 519A for 300µs pulses. As with all GaN hemt power transistors, there is no protective avalanche for over-voltage spikes. The company rates this one for ...

Applications are foreseen switching test signals in test and measurement – particularly ATE systems, and in communications equipment. G3VM-401xY2 and G3VM-601xY2 can be found on this data sheet ...