Abstract: A novel split-gate-trench MOSFET integrated with normal gate and built-in channel diode (BCD) in the same trench is proposed and simulated with Sentaurus TCAD in this paper. Compared with ...
Abstract: For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists of ...
Disclaimer: I hope this tutorial will be useful to others wishing to run molecular dynamics simulations of membrane proteins with AMBER. However, it is as much for my own reference as a guide to ...
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